Automated production bonding system for a wide range of fusion/molecular wafer bonding applications
Wafer bonding is one key enabling technology for the SOI wafer fabrication process as well as for wafer-level 3D integration. With the EVG850 LT automated production bonding system for mechanically aligned SOI and direct wafer bonding with LowTemp™ plasma activation, all essential steps for fusion bonding – from cleaning, plasma activation to pre-bonding and IR-inspection – are combined. Thus, the field-proven, industry-standard EVG850 LT assures a high-throughput, high-yield production process for void-free bonds.
Features
- SOI and direct wafer bonding with EVG's LowTemp™ plasma activation
- Suitable for a wide range of fusion/molecular wafer bonding applications
- Production system built to operate in high-throughput, high-yield environments
- Automated cassette-to-cassette operation (ergo load, SMIF or FOUP)
- Contamination-free backside handling
- Megasonic and/or brush cleaning
- Pre-bonding with mechanical flat or notch alignment
- Advanced remote diagnostics
Technical Data
| Wafer diameter (substrate size) |
|---|
| 100 - 200, 150 - 300 mm |
| Fully-automated cassette-to-cassette operation |
| Pre-bonding chamber |
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| Alignment type: flat-to-flat or notch-to-notch |
| Alignment accuracy: X and Y: ± 50 µm, Theta: ± 0.1 ° |
| Bond force: up to 5 N |
| Bond wave initiation position: flexible from wafer edge to center |
| Vacuum system: 9x10-2 mbar (standard) and 9x10-3 mbar (option with turbo pump) |
| LowTemp™ plasma activation module |
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| 2 standard process gases: N2 and O2 and 2 additional process gases: high purity gases (99.999%), noble gases (Ar, He, Ne, etc.) and forming gases (N2, Ar with up to 4 % H2) |
| Universal mass flow controller: self calibrating for up to 4 process gases, recipe programmable and up to 20.000 sccm flow rate |
| Vacuum system: 9x10-2 mbar (standard) and 9x10-3 mbar (option with turbo pump), high frequency RF generators and matching unit |
| Cleaning station |
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| Cleaning Method: rinse (standard), megasonic nozzle, megasonic area transducer, jet nozzle, brush (optional) |
| Chamber: made of PP or PFA |
| Cleaning media: DI-water (standard), NH4OH and H2O2 with max. 2 % concentration (option) |
| Spinner chuck: vacuum chuck (standard) and edge handling chuck (option) made of metal ion free and clean materials |
| Rotation: up to 3000 rpm (in 5 s) |
| Cleaning arm: for up to 5 media lines (1 megasonic system uses 2 lines) |
| Optional features |
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| ISO 3 mini-environment (according to ISO 14644) |
| LowTemp™ plasma activation chamber |
| IR-inspection station |
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