Low-temperature plasma activation system for SOI, MEMS, compound semiconductors and advanced substrate bonding
The EVG810 LT LowTemp™ plasma activation system is a single-chamber, stand-alone unit with manual operation. The process chamber allows for ex-situ processes (wafers are activated one by one and bonded outside the plasma activation chamber). The EVG810 LT system can be combined with EVG's cleaning and bonding systems to enable a manual operation direct bonding process.
Features
- Surface plasma activation for low-temperature bonding (fusion/molecular and intermediate layer bonding)
- Fastest kinetics of any wafer bonding mechanism
- No wet processes required
- Highest bond strength at low temperature annealing (up to 400 °C)
- Applicable for SOI, MEMS, compound semiconductors, and advanced substrates bonding
- High degree of materials compatibility (including CMOS)
Technical Data
| Wafer diameter (substrate size) |
|---|
| 50 - 200, 100 - 300 mm |
| LowTemp™ plasma activation chamber |
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| Process gases: 2 standard process gases (N2 and O2) |
| Universal mass flow controller: self-calibrating (up to 20.000 sccm) |
| Vacuum system: 9x10-2 mbar |
| Opening / closing of chamber: automated |
| Loading / unloading of chamber: manual (wafer / substrate placed on loading pins) |
| Optional features |
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| Chuck for different wafer sizes |
| Metal ion-free activation |
| Additional process gases with gas mixing |
| High vacuum system with turbo pump: 9x10-3 mbar base pressure |
| Material systems that are qualified with LowTemp™ plasma activated bonding |
|---|
| Si: Si/Si, Si/Si (thermally oxidized, Si (thermally oxidized)/Si (thermally oxidized) |
| TEOS/TEOS (thermally oxidized) |
| Si/Ge for Germanium-on-Insulator (GeOI) |
| Si/Si3N4 |
| Glass (borofloat, non-alkali): Si/Glas, Glass/Glass |
| Compound semiconductors: GaAs, GaP, InP |
| Polymers: PMMA, Cyclo Olefin Polymers |
| Best Known Method recipes available for users for the above and for other materials (full list available on request) |
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