SOI wafers are a promising new basic material for the microelectronics industry to produce faster and higher-performance microelectronic devices. Wafer bonding, as one key enabling technology for the SOI wafer fabrication process, achieves high-quality single-crystal silicon films on insulating substrates. With the EVG850 SOI production bonding system, all essential steps for SOI bonding – from cleaning to pre-bonding and IR-inspection – are combined. Thus, the EVG850 assures a high-yield production process for void-free SOI wafers. Being the only production system built to operate in high-throughput, high-yield environments, the EVG850 has been established as the industry standard in the SOI wafer market.
Wafer diameter (substrate size) |
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100 - 200, 150 - 300 mm |
Fully-automated cassette-to-cassette operation |
Pre-bonding chamber |
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Alignment type: flat-to-flat or notch-to-notch |
Alignment accuracy: X and Y: ± 50 µm, Theta: ± 0.1 ° |
Bond force: up to 5 N |
Bond wave initiation position: flexible from wafer edge to center |
Vacuum system: 9x10-2 mbar (standard) and 9x10-3 mbar (option with turbo pump) |
Cleaning station |
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Cleaning Method: rinse (standard), megasonic nozzle, megasonic area transducer, jet nozzle, brush (optional) |
Chamber: made of PP or PFA (option) |
Cleaning media: DI-water (standard), NH4OH and H2O2 with max. 2 % concentration (option) |
Spinner chuck: vacuum chuck (standard) and edge handling chuck (option) made of metal ion free and clean materials |
Rotation: up to 3000 rpm (in 5 s) |
Cleaning arm: for up to 5 media lines (1 megasonic system uses 2 lines) |
Optional features |
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ISO 3 mini-environment (according to ISO 14644) |
LowTemp™ plasma activation chamber |
IR-inspection station |
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